You are hereNovocell Semiconductor Announces NVM IP Tape Out at IBM 45nm

Novocell Semiconductor Announces NVM IP Tape Out at IBM 45nm


April 04, 2012 -- Hermitage, PA,  Novocell Semiconductor, Inc., the leading innovator in high reliability one-time programmable (OTP) antifuse non-volatile memory (NVM), has announced the successful tape out of the firm’s NovoBlox® family NVM at IBM 45nm SOI process. Novocell is pleased to have completed the advanced 45nm node with a confidential customer who commonly services markets ranging from military to heavy industrial to consumer electronics. The confidential customer chose IBM’s foundry for this silicon project, and selected Novocell Semiconductor’s intellectual property (IP) based upon the technology’s reputation for 100% reliability, history of innovation, and licensing flexibility. Novocell continues their record of industry leadership with this announcement, now completing the offering of their NovoBlox family of antifuse OTP at the 45nm advanced node.

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Supported Foundries:

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Novocell Smartbit™ OTP Memory IP significantly reduces costs by implementing highly reliable antifuse technology in standard logic CMOS, without additional process steps.

The entire Smartbit-based OTP family avoids the data retention issues associated with floating gate memory. Unlike polysilicon or laser fuses, it is possible to route over Novobits, NovoBytes and NovoHD, thus consuming no additional chip area.

With the Novocell Smartbit design, our anti-fuse oxide breakdown high voltage is contained entirely within the bit cell itself, and supports programming at wafer, in package, or in circuit.

Learn more by downloading our detailed product information briefs and specifications PDF or contact us for a tailored presentation today!