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SmartBit Technology


 

SmartBit Diagram

The NovoBlox SmartBit™ cell generates and confines the breakdown voltage entirely in the memory core allowing the unprogrammed cells to have the native reliability of the process while only the programmed cells see high voltage.

To ensure that a programmed cell has achieved hard breakdown, NovoBlox applies the high voltage until it detects the current signature of hard breakdown. 100 percent programmability and data retention are guaranteed.

NovoBlox avoids the data retention issues associated with floating gate designs. Unlike polysilicon or laser fuses, it is possible to route over NovoBlox thus consuming no additional chip area.

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Supported Foundries:

TowerJazz

TSMC

IBM Logo

UMC

GlobalFoundries

SilTerra

Novocell News

August 2011: Novocell featured in local Business Journal

July 2009: Novocell partners with ChipEstimate.

GSA

Thank you for stopping by our booth!

June 2011:  PA awards 2nd KIZ equipment grant to Novocell.

September 2010:  Novocell displays at GSA Expo.

COO authors OTP anti-piracy article in EE Times. Read more...

March 2010: Novocell's OTP memory passed the 3000hr retention bake with zero failures.  Proving 30+ years of 100% reliability in the field.

October 2008: JAZZ Semi holds Technology Conference.  Marketing VP presents OTP paper.

July 2008: Ben Franklin Technology PArtners awards funding to Novocell.

February 2011: Novocell exhibits at DesignCon 2011 at the Santa Clara Convention Center.