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Gate Oxide Antifuse Hard Breakdown in Standard CMOS
Novocell's sensing technology allows programming to hard breakdown.
For more information on Novocell's Smartbit™ bit cell and sensing technology, and how it creates a distinct advantage for your antifuse OTP NVM, download this whitepaper.
Novocell Smartbit™ OTP Memory IP significantly reduces costs by implementing highly reliable antifuse technology in standard logic CMOS, without additional process steps.
The entire Smartbit-based OTP family avoids the data retention issues associated with floating gate memory. Unlike polysilicon or laser fuses, it is possible to route over Novobits, NovoBytes and NovoHD, thus consuming no additional chip area.
With the Novocell Smartbit design, our anti-fuse oxide breakdown high voltage is contained entirely within the bit cell itself, and supports programming at wafer, in package, or in circuit.
Learn more by downloading our detailed product information briefs and specifications PDF or contact us for a tailored presentation today!