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You are hereNovocell Awarded Keystone Innovation Zone Grant
July 20, 2011 - Hermitage, PA, The Commonwealth of Pennsylvania has recognized Novocell Semiconductor, Inc. as a leader in driving technology growth in the Penn-Ohio region and has awarded them a Keystone Innovation Zone Grant. This grant will be used to purchase equipment to fully automate Novocell’s testing lab for more efficient silicon verification and IP qualification.
Novocell Smartbit™ OTP Memory IP significantly reduces costs by implementing highly reliable antifuse technology in standard logic CMOS, without additional process steps.
The entire Smartbit-based OTP family avoids the data retention issues associated with floating gate memory. Unlike polysilicon or laser fuses, it is possible to route over Novobits, NovoBytes and NovoHD, thus consuming no additional chip area.
With the Novocell Smartbit design, our anti-fuse oxide breakdown high voltage is contained entirely within the bit cell itself, and supports programming at wafer, in package, or in circuit.
Learn more by downloading our detailed product information briefs and specifications PDF or contact us for a tailored presentation today!